STRUCTURE AND STABILITY OF THE SIH3O2 RADICAL

STRUCTURE AND STABILITY OF THE SIH3O2 RADICAL Научная публикация

Журнал

Journal of Structural Chemistry
ISSN: 0022-4766 , E-ISSN: 1573-8779

Вых. Данные

Год: 1994, Том: 35, Номер: 1, Страницы: 21-26 Страниц : 6 DOI: 10.1007/BF02578497

Авторы

Kachurovskaya N.A. ¹ , Shchegoleva L.N. ² , Plakhutin B.N. ³

Организации

1	Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences.
2	Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences
3	Institute of Catalysis, Siberian Branch, Russian Academy of Sciences

A quantum chemical ab initio study of the electronic structure and force constants of the SiH3O2. radical is reported. The minimum on the potential surface corresponds to a C(s) symmetry structure (the 2A'' term). The Hartree-Fock solution with the minimal energy for this structure does not satisfy the aufbau principle. The calculated enthalpy of SiH3O2. formation from SiH3. and O2(3SIGMA(g)-) is approximately -30 kcal/mole.

Kachurovskaya N.A. , Shchegoleva L.N. , Plakhutin B.N.
STRUCTURE AND STABILITY OF THE SIH3O2 RADICAL
Journal of Structural Chemistry. 1994. V.35. N1. P.21-26. DOI: 10.1007/BF02578497 WOS Scopus РИНЦ

Качуровская Н.А. , Щеголева Л.Н. , Плахутин Б.Н.
Структура и стабильность радикала SIH3O2
Журнал структурной химии (J STRUCT CHEM+). 1994. Т.35. №1. С.25-30. РИНЦ

Опубликована в печати:

1 янв. 1994 г.

Web of science	WOS:A1994PG18800004
Scopus	2-s2.0-51649132676
РИНЦ	29860311
OpenAlex	W2315885344