Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching Full article
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Russian Microelectronics
ISSN: 1063-7397 |
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Output data | Year: 2019, Volume: 48, Number: 1, Pages: 13-27 Pages count : 15 DOI: 10.1134/S1063739719010037 | ||||||||
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Abstract:
Abstract: The masking properties are studied for polymeric structures based on a triacrylamide derivative of polyfluorochalcone at wet etching in aqueous acidic (H2SO4, H3PO4) and alkaline (NaOH) environments, as well as at reactive ion etching (CF4). The kinetic curves are obtained and the etching rates inherent in the photoresists are estimated. A comparison with commercially available photoresists AZ4562 and SU-8 is performed. © 2019, Pleiades Publishing, Ltd.
Cite:
Derevyashkin S.V.
, Soboleva E.A.
, Shelkovnikov V.V.
, Malyshev A.I.
, Korolkov V.P.
Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching
Russian Microelectronics. 2019. V.48. N1. P.13-27. DOI: 10.1134/S1063739719010037 Scopus РИНЦ
Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching
Russian Microelectronics. 2019. V.48. N1. P.13-27. DOI: 10.1134/S1063739719010037 Scopus РИНЦ
ArticleLinkType.TRANSLATED_TO_ORIGINAL:
Деревяшкин С.В.
, Соболева Е.А.
, Шелковников В.В.
, Малышев А.И.
, Корольков В.П.
Маскирующие свойства структур на основе триакриламидного производного полифторхалкона при жидкостном и реактивном ионном травлении
Микроэлектроника. 2019. Т.48. №1. С.16-30. DOI: 10.1134/S0544126919010034 РИНЦ
Маскирующие свойства структур на основе триакриламидного производного полифторхалкона при жидкостном и реактивном ионном травлении
Микроэлектроника. 2019. Т.48. №1. С.16-30. DOI: 10.1134/S0544126919010034 РИНЦ
Dates:
Published print: | Jan 1, 2019 |
Published online: | Apr 22, 2019 |
Identifiers:
Scopus | 2-s2.0-85064834087 |
Elibrary | 38676748 |
OpenAlex | W2942478679 |