Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching

Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching Научная публикация

Журнал

Russian Microelectronics
ISSN: 1063-7397

Вых. Данные

Год: 2019, Том: 48, Номер: 1, Страницы: 13-27 Страниц : 15 DOI: 10.1134/S1063739719010037

Авторы

Derevyashkin S.V. ^1,2 , Soboleva E.A. ¹ , Shelkovnikov V.V. ^1,4 , Malyshev A.I. ³ , Korolkov V.P. ³

Организации

1	(Scopus) Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
2	(Scopus) Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
3	(Scopus) Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
4	(Scopus) Novosibirsk State Technical University, Novosibirsk, 630073, Russian Federation

Abstract: The masking properties are studied for polymeric structures based on a triacrylamide derivative of polyfluorochalcone at wet etching in aqueous acidic (H2SO4, H3PO4) and alkaline (NaOH) environments, as well as at reactive ion etching (CF4). The kinetic curves are obtained and the etching rates inherent in the photoresists are estimated. A comparison with commercially available photoresists AZ4562 and SU-8 is performed. © 2019, Pleiades Publishing, Ltd.

Derevyashkin S.V. , Soboleva E.A. , Shelkovnikov V.V. , Malyshev A.I. , Korolkov V.P.
Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching
Russian Microelectronics. 2019. V.48. N1. P.13-27. DOI: 10.1134/S1063739719010037 Scopus РИНЦ

Деревяшкин С.В. , Соболева Е.А. , Шелковников В.В. , Малышев А.И. , Корольков В.П.
Маскирующие свойства структур на основе триакриламидного производного полифторхалкона при жидкостном и реактивном ионном травлении
Микроэлектроника. 2019. Т.48. №1. С.16-30. DOI: 10.1134/S0544126919010034 РИНЦ

Опубликована в печати:	1 янв. 2019 г.
Опубликована online:	22 апр. 2019 г.

Scopus	2-s2.0-85064834087
РИНЦ	38676748
OpenAlex	W2942478679