Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching

Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching Full article

Journal

Russian Microelectronics
ISSN: 1063-7397

Output data

Year: 2019, Volume: 48, Number: 1, Pages: 13-27 Pages count : 15 DOI: 10.1134/S1063739719010037

Authors

Derevyashkin S.V. ^1,2 , Soboleva E.A. ¹ , Shelkovnikov V.V. ^1,4 , Malyshev A.I. ³ , Korolkov V.P. ³

Affiliations

1	(Scopus) Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
2	(Scopus) Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
3	(Scopus) Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
4	(Scopus) Novosibirsk State Technical University, Novosibirsk, 630073, Russian Federation

Abstract: The masking properties are studied for polymeric structures based on a triacrylamide derivative of polyfluorochalcone at wet etching in aqueous acidic (H2SO4, H3PO4) and alkaline (NaOH) environments, as well as at reactive ion etching (CF4). The kinetic curves are obtained and the etching rates inherent in the photoresists are estimated. A comparison with commercially available photoresists AZ4562 and SU-8 is performed. © 2019, Pleiades Publishing, Ltd.

Derevyashkin S.V. , Soboleva E.A. , Shelkovnikov V.V. , Malyshev A.I. , Korolkov V.P.
Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching
Russian Microelectronics. 2019. V.48. N1. P.13-27. DOI: 10.1134/S1063739719010037 Scopus РИНЦ OpenAlex

Деревяшкин С.В. , Соболева Е.А. , Шелковников В.В. , Малышев А.И. , Корольков В.П.
Маскирующие свойства структур на основе триакриламидного производного полифторхалкона при жидкостном и реактивном ионном травлении
Микроэлектроника. 2019. Т.48. №1. С.16-30. DOI: 10.1134/S0544126919010034 РИНЦ OpenAlex

Published print:	Jan 1, 2019
Published online:	Apr 22, 2019

Scopus:	2-s2.0-85064834087
Elibrary:	38676748
OpenAlex:	W2942478679

DB	Citing
Scopus	4
Elibrary	4
OpenAlex	4