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Obtaining Electrically Conductive Structures by Electrochemical Deposition of Copper onto Substrates of Anodized Aluminum Using Polyfluorochalcones as a Photoresist Layer Научная публикация

Журнал Russian Microelectronics
ISSN: 1063-7397
Вых. Данные Год: 2020, Том: 49, Номер: 3, Страницы: 173-183 Страниц : 11 DOI: 10.1134/S106373972002002X
Ключевые слова anodized aluminum; copper electrochemical deposition; electrically conductive structures; photolithography; photoresist; polyfluorochalcones
Авторы Derevyashkin S.V. 1,2 , Soboleva E.A. 1 , Shelkovnikov V.V. 1,3
Организации
1 (Scopus) Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
2 (Scopus) Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
3 (Scopus) Novosibirsk State Technical University, Novosibirsk, 630073, Russian Federation

Реферат: Abstract: The approaches used to the form electrically conductive structures on aluminum and anodized aluminum substrates using such photoresists as synthesized triacrylamide polyfluorochalcone (TAFCh) and commercial SU-8 are investigated. The effect of adding HF to anodizing and copper-plating electrolytes on the formation of the microstructure of conductive copper films is studied. The experiments reveal that preliminary electrochemical polishing of aluminum substrates makes it possible to significantly increase the quality of copper’s electrochemical deposition in microstructures. The resulting conductive tracks have a resolution of up to 10 μm when they are obtained on an anodized aluminum surface using TAFCh photoresist. In the case of using SU-8 photoresist on anodic alumina, we failed to obtain metallized structures with a resolution higher than 40 μm. © 2020, Pleiades Publishing, Ltd.
Библиографическая ссылка: Derevyashkin S.V. , Soboleva E.A. , Shelkovnikov V.V.
Obtaining Electrically Conductive Structures by Electrochemical Deposition of Copper onto Substrates of Anodized Aluminum Using Polyfluorochalcones as a Photoresist Layer
Russian Microelectronics. 2020. V.49. N3. P.173-183. DOI: 10.1134/S106373972002002X Scopus РИНЦ OpenAlex
Оригинальная: Деревяшкин С.В. , Соболева Е.А. , Шелковников В.В.
Получение электропроводящих структур электрохимическим осаждением меди на подложках анодированного алюминия при использовании полифторхалконов в качестве фоторезистного слоя
Микроэлектроника. 2020. Т.49. №3. С.186-197. DOI: 10.31857/S0544126920020027 РИНЦ OpenAlex
Даты:
Опубликована в печати: 1 мая 2020 г.
Опубликована online: 18 мая 2020 г.
Идентификаторы БД:
Scopus: 2-s2.0-85084916048
РИНЦ: 43284941
OpenAlex: W3027558460
Цитирование в БД: Пока нет цитирований
Альметрики: